In order to develop the next-generation semiconductor nano-devices, we have to make a drastic breakthrough in science and technology for surfaces and interfaces fabricated in nano-meter length scale. Especially, fabrication and control of interface structures in nano-meter length scale, materials design of good-quality high-k dielectrics for gate insulator films, and analysis of electronic transport properties in nano-scale interfaces are crucial to the development of silicon-based nano-devices.

Investigation of exotic properties and functions which other nano-scale structures than silicon-based ones may exhibit, and the knowledge of fabrication of such a nano-scale structures with a given function are also of great importance.

In this project, we are aiming to develop a nano-scale device simulation system to precisely analyze and predict the structures, properties, and functions of nano-scale materials, by mainly using first-principles electronic-structurecalculation methods.