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ZnSe (zinc-blende)


Parameters for band calculation of ZnSe (zinc-blende)

Parameters (in atomic units)
Code PHASE
Exchange-correlation GGA-PBE96
Gcut 5.0 (wf), 15.0 (charge)
kmesh 8 x 8 x 8
Unit cell ZnSe (zinc-blende)
Spin state non-magnetic (NM)
PP (Zn) Zn_ggapbe_us_01.pp
PP (Se) Se_ggapbe_nc_01.pp

Crystal structure of ZnSe (zinc-blende)


Total energy of ZnSe (zinc-blende)


Lattice constants, cohesive energy, and bulk modulus

ZnSe (zinc-blende) PHASE Exp.
a0 (A) 5.765 5.6676
E0 (eV/ZnSe) 5.152 4.38
B0 (GPa) 56.3 62.5

Total energies of atom (Zn, Se)

Zn (atom) PHASE CIAO
Ea(s=0) (eV/atom) -1711.634 -1712.465

Se (atom) PHASE CIAO
Ea(s=0) (eV/atom) -253.379 -253.545
Ea(s=1) (eV/atom) -254.189 -254.316

Band structure and density of states of ZnSe (zinc-blende)


References

  • "Structural and electronic properties of bulk ZnSe"
    A. Continenza, S. Massidda, and A. J. Freeman, Phys. Rev. B 38, 12996 (1988).
  • "Ab initio calculation of the electronic, structural, and dynamical properties of Zn-based semiconductors"
    B. K. Agrawal, P. S. Yasav, and S. Agrawal, Phys. Rev. B 50, 14881 (1994).
  • "Role of d electrons in the zinc-blende semiconductors ZnS, ZnSe, and ZnTe"
    G.-D. Lee, M. H. Lee, and J. Ihm, Phys. Rev. B 52, 1459 (1995).

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