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InSb (zinc-blende)


Parameters for band calculation of InSb (zinc-blende)

Parameters (in atomic units)
Code PHASE
Exchange-correlation GGA-PBE96
Gcut 5.0 (wf), 15.0 (charge)
kmesh 8 x 8 x 8
Unit cell InSb (zinc-blende)
Spin state non-magnetic (NM)
PP (In) In_ggapbe_us_01.pp
PP (Sb) Sb_ggapbe_us_01.pp

Crystal structure of InSb (zinc-blende)


Total energy of InSb (zinc-blende)


Lattice constants, cohesive energy, and bulk modulus

InSb (zinc-blende) PHASE Exp.
a0 (A) 6.639 6.479
E0 (eV/InSb) 5.174 -
B0 (GPa) 37.2 48.3

Total energy of atom (In, Sb)

In (atom) PHASE CIAO
Ea(s=0) (eV/atom) -1538.479 -1538.737
Ea(s=1/2) (eV/atom) -1538.659 -1538.898

Sb (atom) PHASE CIAO
Ea(s=0) (eV/atom) -2190.340 -2191.321
Ea(s=3/2) (eV/atom) -2191.917 -2192.790

Band structure and density of states of InSb (zinc-blende)


References

  • "Structural and electronic properties of narrow-band-gap semiconductors: InP, InAs, and InSb"
    S. Massidda, A. Continenza, A. J. Freeman, T. M. de Pascale, F. Meloni, and M. Serra, Phys. Rev. B 41, 12079 (1990).

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